Effect of the Oxygen Composition Control of HfO <i> <sub>x</sub> </i> Films on Threshold and Memory Switching Characteristics for Hybrid Memory Applications-Reference-Cited by-同舟云学术

Effect of the Oxygen Composition Control of HfO _x Films on Threshold and Memory Switching Characteristics for Hybrid Memory Applications

Published:2022-01-29 Issue:5 Volume:8 Page:2101257
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Lee Seungwoo¹,Kim Seong Hun²,Oh Seungyeol¹,Lee Donghwa²,Hwang Hyunsang¹

Affiliation:

1. Center for Single Atom‐based Semiconductor Device Department of Material Science and Engineering Pohang University of Science and Technology (POSTECH) Pohang 790‐784 Republic of Korea

2. Department of Materials Science and Engineering and Division of Advanced Materials Science Pohang University of Science and Technology (POSTECH) Pohang 37673 Republic of Korea

Funder

Semiconductor Research Corporation

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202101257

Reference50 articles.

1. Breakthrough of selector technology for cross-point 25-nm ReRAM

2. Access devices for 3D crosspoint memory

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Memristors with Tunable Volatility for Reconfigurable Neuromorphic Computing;ACS Nano;2024-06-19

2. Nonvolatile bipolar resistive switching characteristics of aluminum oxide grown by thermal oxidation processes;Semiconductor Science and Technology;2024-05-30

3. Area and Device Count Efficient Binary Logic Circuits using Anti‐Ambipolar Switch Devices;Advanced Electronic Materials;2024-03-15

4. Preparation of wafer-scale highly conformalamorphous hafnium dioxide thin films by atomic layer deposition using a thermally stable boratabenzene ligand-containing hafnium precursor;Applied Surface Science;2023-05

5. Electronic synaptic plasticity and analog switching characteristics in Pt/TiOx/AlOx/AlTaON/TaN multilayer RRAM for artificial synapses;Applied Surface Science;2022-10