Breakthrough of selector technology for cross-point 25-nm ReRAM-Reference-Cited by-同舟云学术

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Breakthrough of selector technology for cross-point 25-nm ReRAM

Published:2017-12 Issue: Volume: Page:
ISSN:
Container-title:2017 IEEE International Electron Devices Meeting (IEDM)
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Author:

Kim Soo Gil,Hwang Hyun Mi,Lee Bo Mi,Moon Joo Young,Park Woo Young,Gyun Byung Gu,Lee Byoung-Ki,Yim Donggyu,Hong Sung-Joo,Lee Jong Chul,Ha Tae Jung,Lee Jong Ho,Lee Jae Yeon,Park Yong Taek,Kim Kyung Wan,Ju Won Ki,Ko Young Seok

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8255107/8268301/08268309.pdf?arnumber=8268309

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mitigating set-stuck failure in 3D phase change memory: substituting square pulses with surge pulses;Science China Information Sciences;2024-04-19

2. Demonstration of Threshold Switching in Undoped SiO _x Layer for Oscillation Neurons;IEEE Transactions on Electron Devices;2024-03

3. Read Disturbances in Cross-Point Phase-Change Memory Arrays—Part I: Physical Modeling With Phase-Change Dynamics;IEEE Transactions on Electron Devices;2023-02

4. NVMExplorer: A Framework for Cross-Stack Comparisons of Embedded Non-Volatile Memories;2022 IEEE International Symposium on High-Performance Computer Architecture (HPCA);2022-04

5. Effect of the Oxygen Composition Control of HfO _x Films on Threshold and Memory Switching Characteristics for Hybrid Memory Applications;Advanced Electronic Materials;2022-01-29

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