Understanding of forming and switching mechanism using trap distribution model for ovonic threshold switch device-Reference-Cited by-同舟云学术

Understanding of forming and switching mechanism using trap distribution model for ovonic threshold switch device

Published:2021-05-24 Issue:21 Volume:118 Page:212103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee Sangmin¹^ORCID,Lee Jangseop¹^ORCID,Kwak Myonghoon¹^ORCID,Mosendz Oleksandr²,Hwang Hyunsang¹^ORCID

Affiliation:

1. Center for Single Atom-Based Semiconductor Device and Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang 790-784, Republic of Korea

2. Western Digital Research Center, Western Digital Corporation, San Jose, California 95119, USA

Funder

Western Digital

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0049568

Reference25 articles.

1. Ultra-High Endurance and Low IOFF Selector based on AsSeGe Chalcogenides for Wide Memory Window 3D Stackable Crosspoint Memory

2. Nanosecond threshold switching of GeTe6 cells and their potential as selector devices

3. Composition Optimization and Device Understanding of Si-Ge-As-Te Ovonic Threshold Switch Selector with Excellent Endurance

4. Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing program scheme

5. Field-induced nucleation switching in binary ovonic threshold switches

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