Nanosecond threshold switching of GeTe6 cells and their potential as selector devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3700743
Reference21 articles.
1. Nanosecond switching in GeTe phase change memory cells
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4. OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications
5. Novel /spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications
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