Role of arsenic in the heteroepitaxy of Ge/GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112722
Reference9 articles.
1. Antibonding state on the Ge(111):As surface: Spectroscopy and dynamics
2. Initial stages of Ge/GaAs(100) interface formation
3. The epitaxy of germanium on gallium arsenide
4. Optimization of the heteroepitaxy of Ge on GaAs for minority-carrier lifetime
5. Active area limitation of Ge/GaAs heterojunctions by means of B ion implantation
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