Active area limitation of Ge/GaAs heterojunctions by means of B ion implantation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336659
Reference14 articles.
1. Heterostructure bipolar transistors: What should we build?
2. Heterostructure bipolar transistors: What should we build?
3. High-frequency characteristics of AlGaAs/GaAs heterojunction bipolar transistors
4. Experiments on Ge-GaAs heterojunctions
5. Experiments on Ge-GaAs heterojunctions
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. 112-GHz collector-up Ge/GaAs heterojunction bipolar transistors with low turn-on voltage;IEEE Transactions on Electron Devices;1996-05
2. Role of arsenic in the heteroepitaxy of Ge/GaAs;Applied Physics Letters;1994-10-31
3. Small-sized collector-up Ge/GaAs heterojunction bipolar transistors with high gain, low base resistance, and high f/sub max/;IEEE Electron Device Letters;1994-02
4. GeAs as a novel arsenic dimer source forn‐type doping of Ge grown by molecular beam epitaxy;Journal of Applied Physics;1993-09-15
5. High-Gain Collector-Top Ge/GaAs Heterojunction Bipolar Transistors with a Base Layer Fabricated by Suppressing Ga Atom Diffusion at Ge/GaAs Heterojunctions;Japanese Journal of Applied Physics;1991-08-15
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