Studies of nanoindentation and residual stress analysis of Ge/GaAs epilayers-Reference-Cited by-同舟云学术

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Studies of nanoindentation and residual stress analysis of Ge/GaAs epilayers

Published:2015-03-31 Issue:5 Volume:30 Page:055004
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Ponraj Joice Sophia,Buffagni Elisa,Deivasigamani Geetha,Dakshanamoorthy Arivuoli,Bosi Matteo,Ferrari Claudio,Attolini Giovanni

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/30/i=5/a=055004/pdf

Reference24 articles.

1. Optimization of the heteroepitaxy of Ge on GaAs for minority-carrier lifetime

2. High-Gain Collector-Top Ge/GaAs Heterojunction Bipolar Transistors with a Base Layer Fabricated by Suppressing Ga Atom Diffusion at Ge/GaAs Heterojunctions

3. Role of arsenic in the heteroepitaxy of Ge/GaAs

4. Giant pop-ins and amorphization in germanium during indentation

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanoindentation hardness of Ge50In4Ga13Se33 chalcogenide glass thin films;Journal of Non-Crystalline Solids;2023-01

2. Mechanical properties of thermally evaporated germanium (Ge) and barium fluoride (BaF2) thin-films;MRS Communications;2022-01-07

3. Temperature environmental adaptability on electrical and stress properties of Ge film in space;Journal of Materials Research and Technology;2021-11

4. Anisotropic Calculation of Mechanical Property of GaAs Crystal;Journal of Inorganic Materials;2021

5. Rapid Wave Velocity Measurement by Brillouin Scattering Using Coherent Phonons Induced by ScAlN Piezoelectric Thin-Film Transducer;IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control;2018-10

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