Nitrogen and oxygen incorporation during rapid thermal processing of Si in N2O
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107706
Reference12 articles.
1. Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O
2. Study of the composition of thin dielectrics grown on Si in a pure N2O ambient
3. High Quality Ultrathin Gate Dielectrics Formation by Thermal Oxidation of Si in N 2 O
4. Composition and growth kinetics of ultrathin SiO2films formed by oxidizing Si substrates in N2O
5. Highly Reliable Thin Nitrided SiO2Films Formed by Rapid Thermal Processing in an N2O Ambient
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1. Effects of temperature and pressure in oxynitridation kinetics on Si(100) with N 2 O gas;Materials Science in Semiconductor Processing;2017-11
2. Atomic state and characterization of nitrogen at the SiC/SiO2 interface;Journal of Applied Physics;2014-01-21
3. Effect of dielectric barrier discharge on semiconductor Si electrode surface;Applied Surface Science;2010-08
4. Oxynitridation of Si(100) surface with thermally excited N2O gas;Thin Solid Films;2006-04
5. Scaling down of ultrathin HfO[sub 2] gate dielectrics by using a nitrided Si surface;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
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