Controlling potential barrier height by changing V-shaped pit size and the effect on optical and electrical properties for InGaN/GaN based light-emitting diodes-Reference-Cited by-同舟云学术

Controlling potential barrier height by changing V-shaped pit size and the effect on optical and electrical properties for InGaN/GaN based light-emitting diodes

Published:2015-01-14 Issue:2 Volume:117 Page:025708
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Okada Narihito¹,Kashihara Hiroyuki¹,Sugimoto Kohei¹,Yamada Yoichi¹,Tadatomo Kazuyuki¹

Affiliation:

1. Graduate School of Science and Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611, Japan

Funder

The Ministry of Education, Culture, Sports, Science and Technology, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4905914

Reference32 articles.

1. The Blue Laser Diode

2. Solid-State Light Sources Getting Smart

3. Modeling of threading dislocation reduction in growing GaN layers

4. High dislocation densities in high efficiency GaN‐based light‐emitting diodes

5. Nitride-based semiconductors for blue and green light-emitting devices

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