The pivotal role of SiO formation in the migration and Ostwald ripening of Ge quantum dots
Author:
Affiliation:
1. Department of Electrical Engineering, National Central University, ChungLi 32001, Taiwan
2. Private Consultant, La Canada, California 91011, USA
Funder
National Science Council Taiwan (NSC)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4896504
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1. Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs
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5. Device engineering for silicon photonics
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