Electroluminescence from strained germanium membranes and implications for an efficient Si-compatible laser-Reference-Cited by-同舟云学术

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Electroluminescence from strained germanium membranes and implications for an efficient Si-compatible laser

Published:2012-03-26 Issue:13 Volume:100 Page:131112
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Nam Donguk,Sukhdeo David,Cheng Szu-Lin,Roy Arunanshu,Chih-Yao Huang Kevin,Brongersma Mark,Nishi Yoshio,Saraswat Krishna

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3699224

Reference21 articles.

1. Compact Performance Models and Comparisons for Gigascale On-Chip Global Interconnect Technologies

2. Rationale and challenges for optical interconnects to electronic chips

3. Strong quantum-confined Stark effect in germanium quantum-well structures on silicon

4. Ge-on-Si p-i-n Photodiodes With a 3-dB Bandwidth of 49 GHz

5. Deformation potential constants of biaxially tensile stressedGeepitaxial films onSi(100)

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4. Recent advances in single crystal narrow band-gap semiconductor nanomembranes and their flexible optoelectronic device applications: Ge, GeSn, InGaAs, and 2D materials;Journal of Materials Chemistry C;2023

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