Towards simultaneous achievement of carrier activation and crystallinity in Ge and GeSn with heated phosphorus ion implantation: An optical study-Reference-Cited by-同舟云学术

Towards simultaneous achievement of carrier activation and crystallinity in Ge and GeSn with heated phosphorus ion implantation: An optical study

Published:2014-09-22 Issue:12 Volume:105 Page:122108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

D'Costa Vijay Richard¹,Wang Lanxiang¹,Wang Wei¹,Lim Sin Leng²,Chan Taw Kuei²,Chua Lye Hing³,Henry Todd³,Zou Wei³,Hatem Christopher³,Osipowicz Thomas²,Tok Eng Soon²,Yeo Yee-Chia¹

Affiliation:

1. Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583

2. Department of Physics, National University of Singapore, Singapore 117551

3. Applied Materials – Varian Semiconductor Equipment, 35 Dory Road, Gloucester, Massachusetts 01930, USA

Funder

National Research Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4896507

Reference30 articles.

1. Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 $^{\circ}\hbox{C}\ \hbox{Si}_{2}\hbox{H}_{6}$ Passivation

2. Atomic layer deposition of Al2O3 on germanium-tin (GeSn) and impact of wet chemical surface pre-treatment

3. Sn-alloying as a means of increasing the optical absorption of Ge at theC- andL-telecommunication bands

4. Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications

5. Increased photoluminescence of strain-reduced, high-Sn composition Ge1−xSnx alloys grown by molecular beam epitaxy

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