1. Y.C. Yeo, X. Gong, M. J. H. van Dal, G. Vellianitis, and M. Passlack, in Technical Digest on International Electron Devices Meeting (IEEE, 2015), pp. 28–31.
2. Lasing in direct-bandgap GeSn alloy grown on Si
3. Ge0.83Sn0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality
4. S. Gupta, B. Vincent, B. Yang, D. Lin, F. Gencarelli, J. Y. J. Lin, R. Chen, O. Richard, H. Bender, B. Magyari-Köpe, M. Caymax, J. Dekoster, Y. Nishi, and K. C. Saraswat, in Technical Digest on International Electron Devices Meeting (IEEE, 2012), pp. 375–378.
5. Interband Transitions inSnxGe1−xAlloys