High-frequency compact analytical noise model for double-gate metal-oxide-semiconductor field-effect transistor
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3077279
Reference29 articles.
1. Silicon-on-Insulator Technology: Materials to VLSI
2. A Comparative Study of Electrical Characteristic on Sub-10-nm Double-Gate MOSFETs
3. Noise modeling for RF CMOS circuit simulation
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1. Compact Noise Modeling Approach in Nano-scaled CSDG MOSFET for RF Switch;Journal of Physics: Conference Series;2021-01-01
2. Compact noise modelling for common double‐gate metal–oxide–semiconductor field‐effect transistor adapted to gate‐oxide‐thickness asymmetry;IET Circuits, Devices & Systems;2016-01
3. Compact Models for Advanced CMOS Devices;Nanoscale CMOS;2013-03-05
4. Nanoscale FETs;Silicon-Based Millimeter-wave Technology - Measurement, Modeling and Applications;2012
5. Analytical low-frequency noise model in the linear region of lightly doped nanoscale double-gate metal-oxide-semiconductor field-effect transistors;Journal of Applied Physics;2010-09-15
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