Analytical low-frequency noise model in the linear region of lightly doped nanoscale double-gate metal-oxide-semiconductor field-effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3483279
Reference34 articles.
1. Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs
2. A physical short-channel threshold voltage model for undoped symmetric double-gate MOSFETs
3. Analog performance of the nanoscale double-gate metal-oxide-semiconductor field-effect-transistor near the ultimate scaling limits
4. Two-Dimensional Analytical Threshold Voltage and Subthreshold Swing Models of Undoped Symmetric Double-Gate MOSFETs
5. Semi-Analytical Modeling of Short-Channel Effects in Si and Ge Symmetrical Double-Gate MOSFETs
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1. Inter-tier electrostatic coupling effects in 3D sequential integration devices and circuits;Solid-State Electronics;2020-06
2. Noise and Fluctuations in Fully Depleted Silicon-on-Insulator MOSFETs;Noise in Nanoscale Semiconductor Devices;2020
3. Impact of Inter-Tier Coupling on Static and Noise Performance in 3D Sequential Integration Technology;2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS);2019-04
4. Modeling of parameters for nano-scale surrounding-gate MOSFET considering quantum mechanical effect;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2013-12-18
5. On-current modeling of short-channel double-gate (DG) MOSFETs with a vertical Gaussian-like doping profile;Journal of Semiconductors;2013-05
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