Modeling of parameters for nano-scale surrounding-gate MOSFET considering quantum mechanical effect
Author:
Affiliation:
1. Electronics and Communication Engineering Department; Meghnad Saha Institute of Technology; Kolkata West Bengal 700150 India
2. Electronics and Telecommunication Engineering Department; Jadavpur University; Kolkata West Bengal 700150 India
Funder
DST, Govt. of India and AICTE
Publisher
Wiley
Subject
Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/jnm.1965/fullpdf
Reference25 articles.
1. http://www.itrs.net 2009
2. Scaling theory for cylindrical, fully depleted, surrounding-gate MOSFETs;Auth;IEEE Electron Device Lett,1997
3. Stacked Nanowires ΦFET with Independent Gates: A Novel Device for Ultra-dense Low-Power Applications
4. A two-dimensional analytical solution for short-channel effects in nanowire MOSFETs;Yu;IEEE Trans Electron Devices,2009
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