Compact Models for Advanced CMOS Devices

Author:

Iñiguez B.,Lime F.,Lázaro A.,Fjeldly T. A.

Publisher

John Wiley & Sons, Inc.

Reference66 articles.

1. “Analytical predictive modeling of the study of the scalability limits of multiple gate MOSFETs”;ABD EL HAMID;Solid-State Electronics,2007

2. “A 3D analytical physically-based model for the subthreshold swing in undoped tri-gate FinFETs”;ABD EL HAMID;IEEE Trans. on Electron Devices,2007

3. “Two-dimensional analytical threshold voltage and subthreshold swing models of undoped symmetric double gate MOSFETs”;ABD EL HAMID;IEEE Trans. on Electron Devices,2007

4. “Analytical model of the threshold voltage and subthreshold swing of undoped cylindrical gate all around MOSFETs”;ABD EL HAMID;IEEE Transaction on Electron Devices,2007

5. “Scaling theory for cylindrical fully depleted, surrounding gate MOSFET”;AUTH;IEEE Electron Device Lett.,1997

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