Annealing induced extended defects in as-grown and ion-implanted 4H–SiC epitaxial layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3457840
Reference21 articles.
1. Performance limiting micropipe defects in silicon carbide wafers
2. Effects of Dislocations on Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer
3. Dislocation evolution in 4H-SiC epitaxial layers
4. Dislocation nucleation in 4H silicon carbide epitaxy
5. Aspects of Dislocation Behavior in SiC
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