Generation of carrier concentrations as high as 5×1019cm−3in GaAs by Si doping using a KrF excimer laser
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108047
Reference18 articles.
1. Efficient Si solar cells by laser photochemical doping
2. Electrical properties of laser chemically doped silicon
3. Ultra-violet laser doping of silicon
4. Ultra-shallow high-concentration boron profiles for CMOS processing
5. ArF excimer laser doping of boron into silicon
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1. Experimental and numerical studies of Ar+-laser-assisted Si doping of GaAs with SiBr4 by chemical beam epitaxy;Journal of Crystal Growth;2000-03
2. Microprocessing of Electronic Materials Using Short Wavelength Lasers;Solid State Phenomena;1997-08
3. Ultra-shallow p+-junction formation in silicon by excimer laser doping: a heat and mass transfer perspective;International Journal of Heat and Mass Transfer;1996-12
4. Excimer laser assisted spin-on doping of boron into silicon;Semiconductor Science and Technology;1996-09-01
5. Chemical beam epitaxy and laser-modified chemical beam epitaxy of InGaAs using tris-dimethylaminoarsenic;Journal of Electronic Materials;1995-07
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