Excimer laser assisted spin-on doping of boron into silicon-Reference-Cited by-同舟云学术

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Excimer laser assisted spin-on doping of boron into silicon

Published:1996-09-01 Issue:9 Volume:11 Page:1285-1290
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Lo V C,Wong Y W,Cho H C,Chen Y Q,Ho S M,Chan P W,Tong K Y

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Ultra-shallow high-concentration boron profiles for CMOS processing

2. Fabrication of submicrometer MOSFET's using gas immersion laser doping (GILD)

3. Channeling effect of low energy boron implant in

4. Electrical properties of laser chemically doped silicon

5. Laser‐induced melting of predeposited impurity doping technique used to fabricate shallow junctions

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-temperature micro-photoluminescence spectroscopy on laser-doped silicon with different surface conditions;Applied Physics A;2016-03-21

2. Influence of laser power on the properties of laser doped solar cells;Solar Energy Materials and Solar Cells;2011-04

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