Laser‐induced melting of predeposited impurity doping technique used to fabricate shallow junctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339747
Reference4 articles.
1. Efficient Si solar cells by laser photochemical doping
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4. Time‐resolved reflectivity during pulsed‐laser irradiation of GaAs
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