Experimental and numerical studies of Ar+-laser-assisted Si doping of GaAs with SiBr4 by chemical beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. GaAs P-N Junction and Doping Superlattices Grown by Laser-Assisted MOVPE
2. Generation of carrier concentrations as high as 5×1019cm−3in GaAs by Si doping using a KrF excimer laser
3. Low‐temperature growth of high resistivity GaAs by photoassisted metalorganic chemical vapor deposition
4. J.H. Seinfeld, Atmospheric Chemistry and Physics of Air Pollution, Section 7.5, Wiley, New York, 1986.
5. High‐efficiency silicon doping of InP and In0.53Ga0.47As in gas source and metalorganic molecular beam epitaxy using silicon tetrabromide
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