Positron annihilation study of defects in boron implanted silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.373441
Reference30 articles.
1. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
2. Interaction of positron beams with surfaces, thin films, and interfaces
3. Characterization of defects in Si and SiO2−Si using positrons
4. Positron-Beam Techniques for Materials Characterization
5. Depth profile of vacancy‐type defects in B+‐implanted Si with a SiO2overlayer by a variable‐energy positron beam
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Vacancy-Boron Complexes in Plasma Immersion Ion-Implanted Si Probed by a Monoenergetic Positron Beam;Japanese Journal of Applied Physics;2010-05-20
2. Evolution of erbium lattice locations in silicon: Effects of thermal annealing and codoped impurities (carbon, nitrogen, oxygen, and fluorine);Journal of Applied Physics;2006-07-15
3. Improved depth profiling with slow positrons of ion implantation-induced damage in silicon;Journal of Applied Physics;2003-10
4. Evidence of oxygen-stabilized hexagonal interstitial erbium in silicon;Physical Review B;2003-07-25
5. Positron Annihilation Studies of Vacancy Defects in Crystalline and Amorphous Si;Defect and Diffusion Forum;2001-11
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