Improved depth profiling with slow positrons of ion implantation-induced damage in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1606855
Reference36 articles.
1. Characterization of defects in Si and SiO2−Si using positrons
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4. Depth profile of vacancy‐type defects in B+‐implanted Si with a SiO2overlayer by a variable‐energy positron beam
5. Defects in silicon afterB+implantation: A study using a positron-beam technique, Rutherford backscattering, secondary neutral mass spectroscopy, and infrared absorption spectroscopy
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1. Microstructure Analysis of Silicon Nanowalls: Insights from Positron Beam Doppler Broadening Measurements;Silicon;2024-07-08
2. Lattice Defects Underneath Hydrogen-induced Intergranular Fracture Surface of Ni-Cr Alloy Evaluated by Low-energy Positron Beam;ISIJ International;2023-11-15
3. Probing the Free Volume in Polymers by Means of Positron Annihilation Lifetime Spectroscopy;Polymers;2023-07-23
4. Positron annihilation spectroscopy of defects in nuclear and irradiated materials- a review;Materials Characterization;2021-04
5. Interaction of low-energy muons with defect profiles in proton-irradiated Si and 4H -SiC;Physical Review B;2019-09-17
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