Pressure dependence of Si/SiO2 degradation suppression by helium
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.372990
Reference16 articles.
1. Si-SiO[sub 2] Fast Interface State Measurements
2. High-Temperature SiO2Decomposition at the SiO2/Si Interface
3. Effect of post‐oxidation anneal temperature on radiation‐induced charge trapping in metal‐oxide‐semiconductor devices
4. Defect Microchemistry at the SiO2/Si Interface
5. Carbon impurities at a Si-SiO2 interface
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1. Rapid and damage-free outgassing of implanted helium from amorphous silicon oxycarbide;Scientific Reports;2018-03-22
2. Generation of Si dangling bond defects at Si/insulator interfaces induced by oxygen scavenging;physica status solidi (b);2014-10-06
3. Suppression of Silicidation in Poly-Si/high-.KAPPA. Insulator/SiO2/Si Structure by Helium through Process;Hyomen Kagaku;2005
4. Suppression of silicidation in polycrystalline-Si/ high-κ insulator/SiO2∕Si structure by helium through process;Journal of Applied Physics;2004-08-15
5. Radiation effects and hardening of MOS technology: devices and circuits;IEEE Transactions on Nuclear Science;2003-06
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