Suppression of silicidation in polycrystalline-Si/ high-κ insulator/SiO2∕Si structure by helium through process
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1773382
Reference17 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Thermal stability of ultrathin ZrO2 films prepared by chemical vapor deposition on Si(100)
3. Electrical characteristics and thermal stability of n[sup +] polycrystalline- Si/ZrO[sub 2]/SiO[sub 2]/Si metal–oxide–semiconductor capacitors
4. Reaction steps of silicidation in ZrO2/SiO2/Si layered structure
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1. Improved thermal stability, interface, and electrical properties of HfO2 films prepared by pulsed laser deposition using in situ ionized nitrogen;Applied Physics Letters;2009-07-20
2. Control of oxidation and reduction reactions at HfSiO∕Si interfaces through N exposure or incorporation;Applied Physics Letters;2008-11-24
3. Zirconium and hafnium oxide interface with silicon: Computational study of stress and strain effects;Computational Materials Science;2008-10
4. Enhancement of the Flatband Modulation of Ni-Silicided Gates on Hf-Based Dielectrics;IEEE Transactions on Electron Devices;2008-08
5. Suppression of silicidation and crystallization by atmosphere controlled annealing for poly-crystalline silicon/HfO2∕SiO2∕Si gate stack structures;Applied Physics Letters;2007-07-02
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