Improved thermal stability, interface, and electrical properties of HfO2 films prepared by pulsed laser deposition using in situ ionized nitrogen
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3184577
Reference22 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's
3. Thermal stability and structural characteristics of HfO2 films on Si (100) grown by atomic-layer deposition
4. Application of HfSiON as a gate dielectric material
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4. Structure and properties of Hf-O-N films prepared by high-rate reactive HiPIMS with smoothly controlled composition;Ceramics International;2017-05
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