Generation of Si dangling bond defects at Si/insulator interfaces induced by oxygen scavenging-Reference-Cited by-同舟云学术

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Generation of Si dangling bond defects at Si/insulator interfaces induced by oxygen scavenging

Published:2014-10-06 Issue:11 Volume:251 Page:2193-2196
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Cerbu F.¹,Nguyen A. P. D.¹,Kepa J.¹,Afanas'ev V. V.¹,Stesmans A.¹

Affiliation:

1. Department of Physics and Astronomy; University of Leuven; 3001 Leuven Belgium

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Lithography and the future of Moore's law

2. Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions

3. Engineering chemically abrupt high-k metal oxide∕silicon interfaces using an oxygen-gettering metal overlayer

4. Chemical states and electrical properties of a high-k metal oxide/silicon interface with oxygen-gettering titanium-metal-overlayer

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1. Thermal phase separation of ZrSiO4thin films and frequency- dependent electrical characteristics of the Al/ZrSiO4/p-Si/Al MOS capacitors;Semiconductor Science and Technology;2018-04-18

2. High-kgadolinium scandate on Si obtained by high pressure sputtering from metal targets andin-situplasma oxidation;Semiconductor Science and Technology;2017-02-10

3. Interface Scavenging;Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets;2017

4. Introduction;Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets;2017

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