Suppression of Silicidation in Poly-Si/high-.KAPPA. Insulator/SiO2/Si Structure by Helium through Process-Reference-Cited by-同舟云学术

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Suppression of Silicidation in Poly-Si/high-.KAPPA. Insulator/SiO2/Si Structure by Helium through Process

Published:2005 Issue:5 Volume:26 Page:274-279
ISSN:0388-5321
Container-title:Hyomen Kagaku
language:en
Short-container-title:Journal of The Surface Science Society of Japan

Author:

MURAOKA Kouichi¹

Affiliation:

1. Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation

Publisher

Surface Science Society Japan

Subject

General Earth and Planetary Sciences,General Engineering,General Environmental Science

Link

http://www.jstage.jst.go.jp/article/jsssj/26/5/26_5_274/_pdf

Reference22 articles.

1. 1) 例えば

2. High-κ gate dielectrics: Current status and materials properties considerations

3. Thermal stability of ultrathin ZrO2 films prepared by chemical vapor deposition on Si(100)

4. 3) Y. Morisaki, T. Aoyama, Y. Sugita, K. Irino, T. Sugii and T. Nakamura: Tech. Dig. Int. Electron Devices Meet. '02 (2002) p. 861.

5. Electrical characteristics and thermal stability of n[sup +] polycrystalline- Si/ZrO[sub 2]/SiO[sub 2]/Si metal–oxide–semiconductor capacitors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature Dependence of Oxygen Diffusion and Crystal Structure for Thermally Oxidized Titanium Thin Films;Japanese Journal of Applied Physics;2012-01

2. Temperature Dependence of Oxygen Diffusion and Crystal Structure for Thermally Oxidized Titanium Thin Films;Japanese Journal of Applied Physics;2012-01-01

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