Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1556959
Reference10 articles.
1. A copper/polyimide Metal-base packaging technology
2. Oxidation and reduction of copper oxide thin films
3. Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additions
4. Low resistivity body‐centered cubic tantalum thin films as diffusion barriers between copper and silicon
5. Reaction between Cu and PtSi with Cr, Ti, W, and C barrier layers
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