Real-time in situ x-ray diffraction as a method to control epitaxial growth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1582360
Reference18 articles.
1. Reconstruction and defect structure of vicinal GaAs(001) and AlxGa1−xAs(001) surfaces during MBE growth
2. In-situ characterization of II/VI molecular beam epitaxy growth using reflection high-energy electron diffraction oscillations
3. Strain profiles in overcritical (001) ZnSe/GaAs heteroepitaxial layers
4. Effect of lattice mismatch in ZnSe epilayers grown on GaAs by molecular beam epitaxy
5. Controlled ordering and positioning of InAs self-assembled quantum dots
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2. Formation and consequences of misfit dislocations in heteroepitaxial growth;physica status solidi (c);2007-09
3. In-situ X-ray diffraction during epitaxial growth of ZnSe-based heterostructures on (001)GaAs;physica status solidi (c);2007-09
4. Monitoring of ZnCdSe layer properties by in situ x-ray diffraction during heteroepitaxy on (001)GaAs substrates;Applied Physics Letters;2007-04-16
5. Off-lattice Kinetic Monte Carlo Simulations of Strained Heteroepitaxial Growth;Multiscale Modeling in Epitaxial Growth
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