Reconstruction and defect structure of vicinal GaAs(001) and AlxGa1−xAs(001) surfaces during MBE growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference38 articles.
1. GaAs Epitaxy by a Molecular Beam Method: Observations of Surface Structure on the (001) Face
2. Composition and structure of differently prepared GaAs(100) surfaces studied by LEED and AES
3. Surface‐stoichiometry dependence of As2 desorption and As4 ‘‘reflection’’ from GaAs(001)
4. Development of steps on GaAs during molecular beam epitaxy
5. Disorder on GaAs(001) surfaces prepared by molecular beam epitaxy
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