Monitoring of ZnCdSe layer properties by in situ x-ray diffraction during heteroepitaxy on (001)GaAs substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2724892
Reference12 articles.
1. Optical Characterization of Epitaxial Semiconductor Layers
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3. Determination of AlAs optical constants by variable angle spectroscopic ellipsometry and a multisample analysis
4. Combined molecular beam epitaxy and diffractometer system forin situx-ray studies of crystal growth
5. In situ investigation of the island nucleation of Ge on Si(001) using x-ray scattering methods
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