In-situ X-ray diffraction during epitaxial growth of ZnSe-based heterostructures on (001)GaAs-Reference-Cited by-同舟云学术

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In-situ X-ray diffraction during epitaxial growth of ZnSe-based heterostructures on (001)GaAs

Published:2007-09 Issue:9 Volume:4 Page:3166-3182
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Benkert Andreas,Schumacher Claus,Neder Reinhard B.,Brunner Karl

Publisher

Wiley

Subject

Condensed Matter Physics

Reference29 articles.

1. and , Optical Characterization of Epitaxial Semiconductor Layers (Springer, Berlin, 1996).

2. and , High Resolution X-ray Diffractometry and Topography (Taylor & Francis, 1998).

3. Determination of critical layer thickness in InxGa1−xAs/GaAs heterostructures by x‐ray diffraction

4. In-situ characterization of II/VI molecular beam epitaxy growth using reflection high-energy electron diffraction oscillations

5. Determination of AlAs optical constants by variable angle spectroscopic ellipsometry and a multisample analysis

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dynamics of strain relaxation studied by in situ x-ray diffraction immediately after layer heteroepitaxy;Applied Physics Letters;2009-05-25

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