Electromigration-induced drift in damascene and plasma-etched Al(Cu). II. Mass transport mechanisms in bamboo interconnects
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.372389
Reference30 articles.
1. Electromigration-induced drift in damascene and plasma-etched Al(Cu). I. Kinetics of Cu depletion in polycrystalline interconnects
2. Electromigration in Al(Cu) two‐level structures: Effect of Cu and kinetics of damage formation
3. Anomalous large grains in alloyed aluminum thin films II. Electromigration and diffusion in thin films with very large grains
4. Grain size dependence of electromigration‐induced failures in narrow interconnects
5. Electromigration failure mechanisms in bamboo-grained Al(Cu) interconnections
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