Crystallization and surface erosion of SiC by ion irradiation at elevated temperatures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369333
Reference35 articles.
1. SiC devices: physics and numerical simulation
2. Ion beam modification of 6H/15R SiC crystals
3. Disorder produced in SiC by ion bombardment
4. Ion implantation effects in silicon carbide
5. Optical defects in ion damaged 6H-silicon carbide
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