Characterization of 167 MeV Xe ion irradiated n-type 4H-SiC

Author:

Madito M.J.,Hlatshwayo T.T.,Skuratov V.A.,Mtshali C.B.,Manyala N.,Khumalo Z.M.

Funder

National Research Foundation

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference27 articles.

1. Electrical characterization of 5.4 MeV alpha-particle irradiated 4H-SiC with low doping density;Paradzah;Nucl. Instruments Methods Phys. Res. Sect. B Beam Interact. with Mater. Atoms.,2015

2. Raman spectroscopy study of heavy-ion-irradiated α-SiC;Sorieul;J. Phys. Condens. Matter.,2006

3. Comparative Study of the Effect of Swift Heavy Ion Irradiation at 500 °C and Annealing at 500 °C on Implanted Silicon Carbide;Hlatshwayo,2016

4. Effect of Xe ion (167 MeV) irradiation on polycrystalline SiC implanted with Kr and Xe at room temperature;Hlatshwayo;J. Phys. D. Appl. Phys.,2015

5. Irradiation of 4H-SiC UV detectors with heavy ions;Kalinina;Semiconductors,2015

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