Disorder produced in SiC by ion bombardment
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337577108231058
Reference14 articles.
1. MEASUREMENT OF ION IMPLANTATION LATTICE DAMAGE IN (111) GaAs USING THE SCANNING ELECTRON MICROSCOPE
2. On ion implantation in silicon carbide
3. ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERING
4. Disorder dechanneling of low-energy protons and alpha particles in silicon
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