GaAsP/InGaP HBTs grown epitaxially on Si substrates: Effect of dislocation density on DC current gain
Author:
Affiliation:
1. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
Funder
Center for Energy Efficient Electronics Science (E3S)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5001038
Reference22 articles.
1. Monolithic III-V/Si Integration
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