Integration of III–V materials and Si-CMOS through double layer transfer process
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/54/i=3/a=030209/pdf
Reference25 articles.
1. Physical and technological limitations of NanoCMOS devices to the end of the roadmap and beyond
2. Strained silicon MOSFET technology
3. Strained Si/strained Ge dual-channel heterostructures on relaxed Si0.5Ge0.5 for symmetric mobility p-type and n-type metal-oxide-semiconductor field-effect transistors
4. High-k/Ge MOSFETs for future nanoelectronics
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