Growth kinetics of furnace silicon oxynitridation in nitrous oxide ambients
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365835
Reference38 articles.
1. Future CMOS scaling and reliability
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4. A physical model for boron penetration through an oxynitride gate dielectric prepared by rapid thermal processing in N2O
5. High quality thin gate oxide prepared by annealing low‐pressure chemical vapor deposited SiO2in N2O
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1. Improvements of Performance and Reliability for Metal–Oxide–Nitride–Oxide–Silicon Flash Memory With NO- or $\hbox{N}_{2}\hbox{O}$-Grown Oxynitride as Tunnel Layer;IEEE Transactions on Device and Materials Reliability;2014-03
2. Electrical and Reliability Studies of “Wet $ \hbox{N}_{2}\hbox{O}$” Tunnel Oxides Grown on Silicon for Flash Memory Applications;IEEE Transactions on Device and Materials Reliability;2007-09
3. Tunnel Oxide Growth on Silicon With “Wet Nitrous Oxide” Process for Improved Performance Characteristics;IEEE Electron Device Letters;2006-11
4. Improvement of Electrical Properties and Reliability of ( Ba0.5Sr0.5 ) TiO3 Thin Films on Si Substrates by N2O Prenitridation;Electrochemical and Solid-State Letters;2006-02-01
5. On the role of O2during the thermal oxynitridation of silicon in N2O at high pressure and temperature;Semiconductor Science and Technology;2004-09-15
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