Specific resistivity of delta‐doped contacts inn‐GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350264
Reference6 articles.
1. Metal penetration and dopant redistribution beneath alloyed Ohmic contacts to n‐GaAs
2. Resistance of very small area ohmic contacts on GaAs
3. Delta‐doped ohmic contacts ton‐GaAs
4. Specific contact resistance of metal-semiconductor barriers
5. Direct measurements of interfacial contact resistance, end contact resistance, and interfacial contact layer uniformity
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Schottky diodes with a δ-doped near-surface layer;Journal of Applied Physics;2001-12-15
2. Recent progress in δ-doping of III–V semiconductors grown by metal organic vapour phase epitaxy;Solid-State Electronics;1997-09
3. Influence of the DX center on capacitance‐voltage profiling for Si δ ‐doped AlxGa1−xAs;Journal of Applied Physics;1995-03
4. The effect of the planar doping on the electrical transport properties at the Al:n‐GaAs(100) interface: Ultrahigh effective doping;Journal of Applied Physics;1993-01-15
5. Delta-doped layer influence on Schottky diodes parameters;ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)
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