Schottky diodes with a δ-doped near-surface layer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1415533
Reference15 articles.
1. Reducing the effective height of a Schottky barrier using low‐energy ion implantation
2. Barrier height reduction of the Schottky barrier diode using a thin highly doped surface layer
3. Specific resistivity of delta‐doped contacts inn‐GaAs
4. Schottky-barrier elevation by ion implantation and implant segregation
5. Enhancement of effective barrier height in Ti-silicon Schottky diode using low-energy ion implantation
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3. Influence of He-ion irradiation on the characteristics of Pd/n-Si0.90Ge0.10/Si Schottky contacts;Journal of Physics D: Applied Physics;2007-02-16
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