Numerical simulation study of current–voltage characteristics of a Schottky diode with inverse doped surface layer
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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2. Impact of doping on the performance of p-type Be-doped Al 0.29 Ga 0.71 As Schottky diodes;Modern Electronic Materials;2017-06
3. The Characteristic Parameters of Ni/n-6H-SiC Devices Over a Wide Measurement Temperature Range;Silicon;2016-05-23
4. Effect of near surface inverse doping on graphene silicon heterojunction solar cell;Optical and Quantum Electronics;2016-02-17
5. Performance Analysis of Pt/ZnO Schottky Photodiode Using ATLAS;Journal of Nanoelectronics and Optoelectronics;2015-12-01
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