Impact of doping on the performance of p-type Be-doped Al 0.29 Ga 0.71 As Schottky diodes
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Publisher
Pensoft Publishers
Subject
Automotive Engineering
Reference25 articles.
1. Deep level defects in proton irradiated p-type Al0.5Ga0.5As;Szatkowski;Physica B,2009
2. Doping of semiconductors using radiation defects produced by irradiation with protons and alpha particles;Kozlovski;Semiconductors,2001
3. Photoluminescence determination of the be binding energy in direct-gap AlGaAs;Galbiati;Appl. Phys. Lett.,1997
4. Doping characteristics and electrical properties of Be-doped p-type AlxGa1−xAs by liquid phase epitaxy;Fujita;J. Appl. Phys.,1980
5. Be doping of (311)A and (100) Al0.24Ga0.76As grown by molecular beam epitaxy;Galbiati;Appl. Phys. Lett.,1996
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