Influence of the DX center on capacitance‐voltage profiling for Si δ ‐doped AlxGa1−xAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.358843
Reference27 articles.
1. DC and AC characteristics of delta-doped GaAs FET
2. Delta‐Doped MESFET with MBE‐Grown Si
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4. Delta‐doped ohmic contacts ton‐GaAs
5. Specific resistivity of delta‐doped contacts inn‐GaAs
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1. Capacitance behavior of InAlN Schottky diodes in presence of large concentrations of shallow and deep states related to oxygen;Journal of Applied Physics;2015-05-14
2. Mechanical stress sensor of (n+)nanocrystalline/(p+)crystalline Si heterojunction;Solid State Sciences;2008-09
3. Recent progress in δ-doping of III–V semiconductors grown by metal organic vapour phase epitaxy;Solid-State Electronics;1997-09
4. Electrical transport properties of silicon delta-doped Al[sub 0.30]Ga[sub 0.70]As samples showing suppression of the DX center features;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-07
5. Effect of illumination on the subband electronic structure of Si δ-doped GaAs;Applied Physics Letters;1997-01-06
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