Distribution of the built-in field extracted from switching dynamics in HfO2-based ferroelectric capacitor

Abstract

In this work, we proposed a method to extract the distribution of the built-in field (Eb) from the switching dynamics of the TiN/HfZrO/TiN capacitor. The relationship between reversal polarization and the distribution of Eb is established based on the classic inhomogeneous field mechanism model. Both positive and negative write pulses with different amplitudes and durations are applied to obtain the distribution parameters of Eb. The distribution of Eb is fitted by a Gaussian-type distribution, and the mean value and standard deviation are about −0.02 MV/cm and 0.28 MV/cm, respectively. This work provides an effective approach to analyze Eb directly from the electrical measurement and helps optimize the device design from the polarization switching point of view.