Ferroelectric Polarization-Switching Dynamics and Wake-Up Effect in Si-Doped HfO2-Reference-Cited by-同舟云学术

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Ferroelectric Polarization-Switching Dynamics and Wake-Up Effect in Si-Doped HfO2

Published:2018-12-28 Issue:3 Volume:11 Page:3142-3149
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Lee Tae Yoon^ORCID,Lee Kyoungjun,Lim Hong Heon,Song Myeong Seop,Yang Sang Mo¹,Yoo Hyang Keun²,Suh Dong Ik²,Zhu Zhongwei³,Yoon Alexander³,MacDonald Matthew R.⁴,Lei Xinjian⁴,Jeong Hu Young⁵^ORCID,Lee Donghoon⁶,Park Kunwoo⁶,Park Jungwon⁶^ORCID,Chae Seung Chul

Affiliation:

1. Department of Physics, Sookmyung Women’s University, Seoul 04310, Korea

2. SK Hynix Inc., Icheon-si, Gyeonggi-do 17336, Korea

3. Lam Research Corp., Fremont, California 94538, United States

4. Versum Materials, Inc., Carlsbad, California 92011, United States

5. UNIST Central Research Facilities (UCRF), Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Korea

6. Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Korea

Funder

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Institute for Basic Science

SK Hynix Inc.

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.8b11681

Reference45 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

3. Böscke, T. S.; Müller, J.; Bräuhaus, D.; Schröder, U.; Böttger, U. In Ferroelectricity in Hafnium Oxide: CMOS Compatible Ferroelectric Field Effect Transistors, IEEE International Electron Devices Meeting, 2011.

4. Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films

5. Ferroelectricity in epitaxial Y-doped HfO2 thin film integrated on Si substrate

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