Affiliation:
1. Department of Physics Education Seoul National University Seoul 08826 Republic of Korea
2. Department of Physics and Photon Science Gwangju Institute of Science and Technology (GIST) Gwangju 61005 Republic of Korea
Abstract
AbstractFerroelectric materials are promising candidates for neuromorphic computing synaptic devices due to the nonvolatile multiplicity of spontaneous polarization. To ensure a sufficient memory window, ferroelectric materials with a large coercivity are urgently required for practical applications in highly scaled multi‐bit memory devices. Herein, a remarkable reliability of intermediate ferroelectric polarization states is demonstrated in a textured Al0.66Sc0.34N thin film with a coercive field of 2.4 MV cm−1. Al0.66Sc0.34N thin films are prepared at 300 °C on Pt (111)/Ti/SiO2/Si substrates using a radio frequency reactive sputtering method. Al0.66Sc0.34N thin films exhibit viable ferroelectricity with a large remanent polarization value of >100 µC cm−2. Through the conventional current–voltage characteristics, polarization switching kinetics, and temperature dependence of coercivity, the reproducibility of multiple polarization states with apparent accuracy is attributed to a small critical volume (3.7 × 10−28 m3) and a large activation energy (3.3 × 1027 eV m−3) for nucleation of the ferroelectric domain. This study demonstrates the potential of ferroelectric Al1‐xScxN for synaptic weight elements in neural network hardware.
Funder
Seoul National University
Subject
Electronic, Optical and Magnetic Materials