Acousto–defect interaction in irradiated and non-irradiated silicon n+–p structures
Author:
Affiliation:
1. Faculty of Physics, Taras Shevchenko National University of Kyiv, Kyiv 01601, Ukraine
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5001123
Reference101 articles.
1. Influence of in situ applied ultrasound during Si+ implantation in SiO2 on paramagnetic defect generation
2. Use of ultrasound for metal cluster engineering in ion implanted silicon oxide
3. Ultrasound regeneration of EL2 centres in GaAs
4. Long-wavelength acoustic-mode-enhanced electron emission from Se and Te donors in silicon
5. The variation in activity of recombination centers in silicon p-n structures under the conditions of acoustic loading
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